HWiNFO64 v4.40-2240
Creation Time 25.06.2014 10:59
E91000200396
[Current Computer]
[Operating System]
Memory
[General information]
Total Memory Size: 4 GBytes
Total Memory Size [MB]: 4096
[Current Performance Settings]
Maximum Supported Memory Clock: 666.7 MHz
Current Memory Clock: 665.2 MHz
Current Timing (tCAS-tRCD-tRP-tRAS): 9.0-9-9-24
Memory Runs At: Dual-Channel
Command Rate: 1T
Read to Read Delay (tRD_RD) Different Rank: 1T
Read to Read Delay (tRD_RD) Different DIMM: 3T
Write to Write Delay (tWR_WR) Different Rank: 3T
Write to Write Delay (tWR_WR) Different DIMM: 4T
Read to Write Delay (tRD_WR) Same Rank: 3T
Read to Write Delay (tRD_WR) Different Rank: 3T
Read to Write Delay (tRD_WR) Different DIMM: 3T
Write to Read Delay (tWR_RD) Same Rank (tWTR): 5T
Write to Read Delay (tWR_RD) Different Rank: 1T
Write to Read Delay (tWR_RD) Different DIMM: 1T
Read to Precharge Delay (tRTP): 5T
Write to Precharge Delay (tWTP): 21T
Write Recovery Time (tWR): 10T
RAS# to RAS# Delay (tRRD): 4T
Refresh Cycle Time (tRFC): 107T
Four Activate Window (tFAW): 20T
Row: 0 - 2048 MB PC3-10600 DDR3 SDRAM Samsung M471B5773DH0-CH9
[General Module Information]
Module Number: 0
Module Size: 2048 MBytes
Memory Type: DDR3 SDRAM
Module Type: SO-DIMM
Memory Speed: 666.7 MHz (PC3-10600)
Module Manufacturer: Samsung
Module Part Number: M471B5773DH0-CH9
Module Revision: 0
Module Serial Number: 3801630208
Module Manufacturing Date: Year: 2011, Week: 50
Module Manufacturing Location: 3
SDRAM Manufacturer: Samsung
Error Check/Correction: None
[Module characteristics]
Row Address Bits: 15
Column Address Bits: 10
Number Of Banks: 8
Module Density: 2048 Mb
Number Of Ranks: 1
Device Width: 8 bits
Bus Width: 64 bits
Module Nominal Voltage (VDD): 1.5 V
[Module timing]
Minimum SDRAM Cycle Time (tCKmin): 1.500 ns
CAS# Latencies Supported: 5, 6, 7, 8, 9
Minimum CAS# Latency Time (tAAmin): 13.125 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.125 ns
Minimum Row Precharge Time (tRPmin): 13.125 ns
Minimum Active to Precharge Time (tRASmin): 36.000 ns
Supported Module Timing at 666.7 MHz: 9-9-9-24
Supported Module Timing at 600.0 MHz: 8-8-8-22
Supported Module Timing at 533.3 MHz: 7-7-7-20
Supported Module Timing at 466.7 MHz: 7-7-7-17
Supported Module Timing at 400.0 MHz: 6-6-6-15
Supported Module Timing at 333.3 MHz: 5-5-5-12
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns
Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns
Minimum Refresh Recovery Time Delay (tRFCmin): 160.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns
[Features]
Partial Array Self Refresh (PASR): Not Supported
On-die Thermal Sensor (ODTS) Readout: Not Supported
Auto Self Refresh (ASR): Not Supported
Extended Temperature Refresh Rate: Not Supported
Extended Temperature Range: Supported
Module Temperature Sensor: Not Supported
Module Nominal Height: 29 - 30 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Row: 2 - 2048 MB PC3-10600 DDR3 SDRAM Samsung M471B5673FH0-CH9
[General Module Information]
Module Number: 2
Module Size: 2048 MBytes
Memory Type: DDR3 SDRAM
Module Type: SO-DIMM
Memory Speed: 666.7 MHz (PC3-10600)
Module Manufacturer: Samsung
Module Part Number: M471B5673FH0-CH9
Module Revision: 0
Module Serial Number: 2385006434
Module Manufacturing Date: Year: 2011, Week: 16
Module Manufacturing Location: 2
SDRAM Manufacturer: Samsung
Error Check/Correction: None
[Module characteristics]
Row Address Bits: 14
Column Address Bits: 10
Number Of Banks: 8
Module Density: 1024 Mb
Number Of Ranks: 2
Device Width: 8 bits
Bus Width: 64 bits
Module Nominal Voltage (VDD): 1.5 V
[Module timing]
Minimum SDRAM Cycle Time (tCKmin): 1.500 ns
CAS# Latencies Supported: 5, 6, 7, 8, 9
Minimum CAS# Latency Time (tAAmin): 13.125 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.125 ns
Minimum Row Precharge Time (tRPmin): 13.125 ns
Minimum Active to Precharge Time (tRASmin): 36.000 ns
Supported Module Timing at 666.7 MHz: 9-9-9-24
Supported Module Timing at 600.0 MHz: 8-8-8-22
Supported Module Timing at 533.3 MHz: 7-7-7-20
Supported Module Timing at 466.7 MHz: 7-7-7-17
Supported Module Timing at 400.0 MHz: 6-6-6-15
Supported Module Timing at 333.3 MHz: 5-5-5-12
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns
Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns
Minimum Refresh Recovery Time Delay (tRFCmin): 110.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns
[Features]
Partial Array Self Refresh (PASR): Not Supported
On-die Thermal Sensor (ODTS) Readout: Not Supported
Auto Self Refresh (ASR): Not Supported
Extended Temperature Refresh Rate: Not Supported
Extended Temperature Range: Supported
Module Temperature Sensor: Not Supported
Module Nominal Height: 29 - 30 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
windwos 10
5th May 2023, 00:01 in Windows