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  1. #1
    HW enthusiast todo1's Avatar
    Join Date: May:2008
    Location:
    Posts: 978

    : RAM Module Density 1024 Mb/ 2048 Mb , ?

    ,
    - EliteBook 8560p.
    2Gb, .
    , memtest 12 .
    2Gb .
    Windows 8.1 64bit.

    , Module Density 2048 Mb, 1024 Mb.

    ?


    HWiNFO64 v4.40-2240

    Creation Time 25.06.2014 10:59


    E91000200396

    [Current Computer]

    [Operating System]



    Memory

    [General information]
    Total Memory Size: 4 GBytes
    Total Memory Size [MB]: 4096

    [Current Performance Settings]
    Maximum Supported Memory Clock: 666.7 MHz
    Current Memory Clock: 665.2 MHz
    Current Timing (tCAS-tRCD-tRP-tRAS): 9.0-9-9-24
    Memory Runs At: Dual-Channel

    Command Rate: 1T
    Read to Read Delay (tRD_RD) Different Rank: 1T
    Read to Read Delay (tRD_RD) Different DIMM: 3T
    Write to Write Delay (tWR_WR) Different Rank: 3T
    Write to Write Delay (tWR_WR) Different DIMM: 4T
    Read to Write Delay (tRD_WR) Same Rank: 3T
    Read to Write Delay (tRD_WR) Different Rank: 3T
    Read to Write Delay (tRD_WR) Different DIMM: 3T
    Write to Read Delay (tWR_RD) Same Rank (tWTR): 5T
    Write to Read Delay (tWR_RD) Different Rank: 1T
    Write to Read Delay (tWR_RD) Different DIMM: 1T
    Read to Precharge Delay (tRTP): 5T
    Write to Precharge Delay (tWTP): 21T
    Write Recovery Time (tWR): 10T
    RAS# to RAS# Delay (tRRD): 4T
    Refresh Cycle Time (tRFC): 107T
    Four Activate Window (tFAW): 20T


    Row: 0 - 2048 MB PC3-10600 DDR3 SDRAM Samsung M471B5773DH0-CH9

    [General Module Information]
    Module Number: 0
    Module Size: 2048 MBytes
    Memory Type: DDR3 SDRAM
    Module Type: SO-DIMM
    Memory Speed: 666.7 MHz (PC3-10600)
    Module Manufacturer: Samsung
    Module Part Number: M471B5773DH0-CH9
    Module Revision: 0
    Module Serial Number: 3801630208
    Module Manufacturing Date: Year: 2011, Week: 50
    Module Manufacturing Location: 3
    SDRAM Manufacturer: Samsung
    Error Check/Correction: None

    [Module characteristics]
    Row Address Bits: 15
    Column Address Bits: 10
    Number Of Banks: 8
    Module Density: 2048 Mb
    Number Of Ranks: 1
    Device Width: 8 bits
    Bus Width: 64 bits
    Module Nominal Voltage (VDD): 1.5 V

    [Module timing]
    Minimum SDRAM Cycle Time (tCKmin): 1.500 ns
    CAS# Latencies Supported: 5, 6, 7, 8, 9
    Minimum CAS# Latency Time (tAAmin): 13.125 ns
    Minimum RAS# to CAS# Delay (tRCDmin): 13.125 ns
    Minimum Row Precharge Time (tRPmin): 13.125 ns
    Minimum Active to Precharge Time (tRASmin): 36.000 ns

    Supported Module Timing at 666.7 MHz: 9-9-9-24
    Supported Module Timing at 600.0 MHz: 8-8-8-22
    Supported Module Timing at 533.3 MHz: 7-7-7-20
    Supported Module Timing at 466.7 MHz: 7-7-7-17
    Supported Module Timing at 400.0 MHz: 6-6-6-15
    Supported Module Timing at 333.3 MHz: 5-5-5-12

    Minimum Write Recovery Time (tWRmin): 15.000 ns
    Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns
    Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns
    Minimum Refresh Recovery Time Delay (tRFCmin): 160.000 ns
    Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
    Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
    Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns

    [Features]
    Partial Array Self Refresh (PASR): Not Supported
    On-die Thermal Sensor (ODTS) Readout: Not Supported
    Auto Self Refresh (ASR): Not Supported
    Extended Temperature Refresh Rate: Not Supported
    Extended Temperature Range: Supported
    Module Temperature Sensor: Not Supported
    Module Nominal Height: 29 - 30 mm
    Module Maximum Thickness (Front): 1 - 2 mm
    Module Maximum Thickness (Back): 1 - 2 mm


    Row: 2 - 2048 MB PC3-10600 DDR3 SDRAM Samsung M471B5673FH0-CH9

    [General Module Information]
    Module Number: 2
    Module Size: 2048 MBytes
    Memory Type: DDR3 SDRAM
    Module Type: SO-DIMM
    Memory Speed: 666.7 MHz (PC3-10600)
    Module Manufacturer: Samsung
    Module Part Number: M471B5673FH0-CH9
    Module Revision: 0
    Module Serial Number: 2385006434
    Module Manufacturing Date: Year: 2011, Week: 16
    Module Manufacturing Location: 2
    SDRAM Manufacturer: Samsung
    Error Check/Correction: None

    [Module characteristics]
    Row Address Bits: 14
    Column Address Bits: 10
    Number Of Banks: 8
    Module Density: 1024 Mb
    Number Of Ranks: 2
    Device Width: 8 bits
    Bus Width: 64 bits
    Module Nominal Voltage (VDD): 1.5 V

    [Module timing]
    Minimum SDRAM Cycle Time (tCKmin): 1.500 ns
    CAS# Latencies Supported: 5, 6, 7, 8, 9
    Minimum CAS# Latency Time (tAAmin): 13.125 ns
    Minimum RAS# to CAS# Delay (tRCDmin): 13.125 ns
    Minimum Row Precharge Time (tRPmin): 13.125 ns
    Minimum Active to Precharge Time (tRASmin): 36.000 ns

    Supported Module Timing at 666.7 MHz: 9-9-9-24
    Supported Module Timing at 600.0 MHz: 8-8-8-22
    Supported Module Timing at 533.3 MHz: 7-7-7-20
    Supported Module Timing at 466.7 MHz: 7-7-7-17
    Supported Module Timing at 400.0 MHz: 6-6-6-15
    Supported Module Timing at 333.3 MHz: 5-5-5-12

    Minimum Write Recovery Time (tWRmin): 15.000 ns
    Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns
    Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns
    Minimum Refresh Recovery Time Delay (tRFCmin): 110.000 ns
    Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
    Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
    Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns

    [Features]
    Partial Array Self Refresh (PASR): Not Supported
    On-die Thermal Sensor (ODTS) Readout: Not Supported
    Auto Self Refresh (ASR): Not Supported
    Extended Temperature Refresh Rate: Not Supported
    Extended Temperature Range: Supported
    Module Temperature Sensor: Not Supported
    Module Nominal Height: 29 - 30 mm
    Module Maximum Thickness (Front): 1 - 2 mm
    Module Maximum Thickness (Back): 1 - 2 mm

    /Hidden: :
    Last edited by todo1; 25th June 2014 at 11:26.
    PC1:P6TD/X5650/6x2GB/RX480 8GB/MX300 750GB/CM Storm Scout/SS 660 Platinum
    PC2:X570m Pro4/3700x/2x16GB 3600MHz/RX580 8GB/Sabrent 500GB Rocket/500GB 970 Evo+/Raijintek Styx/SSR-650FX 650W/Dell P2416D
    NAS/HTPC: Asrock N3700 ITX/ForceGT 120GB/2x8TB WD/2x4GB BattleTag: TODO1#2584

  2. #2
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