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Thread: Samsung - GDDR4
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26th February 2007 17:04 #1
Samsung - GDDR4
International Solid-State Circuits Conference (ISSCC) GDDR4 memory chips, 40% - GDDR4.
4 GHz GDDR4 memory chips 512 MB 80 nm process . 1.4 V - 2.1 V 4 Gb/s (4 gigabit per second, 4 GHz).
GDDR4 memory 4.0 GHz 128 GB/s, ATI Radeon X1950 XTX, GDDR4. , 512-bit memory access, Samsung 256 GB/s, 86.4 GB/s, NVIDIA GeForce 8800 GTX.
"Kaldata"
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27th February 2007 14:09 #2Registered User
Join Date: Sep:2005
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22CL + 8 burst = 30, 30 256
4000/30 ~130; 130*256~32GB/s, 4 128GB/s
DDR3 CL10 8 = 18 256
2000/18 ~110; ~28GB/s
4GB/s 2Ghz ,
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27th February 2007 15:20 #3
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27th February 2007 15:35 #4Registered User
Join Date: Sep:2005
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Posts: 6,924
http://www.samsung.com/Products/Semi...K4U52324QE.htm
"...CL16 @ 1.2GHz CL18 @ 1.4GHz .."
"...CAS latency :..... 16, 17, 18, 19, 20, 21, 22 (clock)
Burst length : 8 only..."
...CL20 @1.6 CL22@1.8,
CL22, 4Ghz
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27th February 2007 14:32 #5PlayStation 2 + 42" Plasma screen




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