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  1. #1
    Unregistered User vessk0's Avatar
    Join Date: Aug:2006
    Location:
    Posts: 5,337

    Samsung - GDDR4

    International Solid-State Circuits Conference (ISSCC) GDDR4 memory chips, 40% - GDDR4.
    4 GHz GDDR4 memory chips 512 MB 80 nm process . 1.4 V - 2.1 V 4 Gb/s (4 gigabit per second, 4 GHz).
    GDDR4 memory 4.0 GHz 128 GB/s, ATI Radeon X1950 XTX, GDDR4. , 512-bit memory access, Samsung 256 GB/s, 86.4 GB/s, NVIDIA GeForce 8800 GTX.

    "Kaldata"

    PC: GB Z390 Aorus Master | i9-9900K @ 5GHz | 2x8GB DDR4 @ 4GHz | MSI RTX 3090 Suprim X | Samsung 970 Evo Plus | Corsair HX1000 | LG 48" OLED C1
    Audio: Open Baffle [Supravox 285 GMF + 165 GMF + Bliesma T34B] | WAF Najda DSP | 3x Pass Labs XA25

  2. #2
    Registered User
    Join Date: Sep:2005
    Location:
    Posts: 6,924
    22CL + 8 burst = 30, 30 256

    4000/30 ~130; 130*256~32GB/s, 4 128GB/s

    DDR3 CL10 8 = 18 256
    2000/18 ~110; ~28GB/s

    4GB/s 2Ghz ,

  3. #3
    chaotic good -Feanor-'s Avatar
    Join Date: Jul:2005
    Location: Valinor
    Posts: 13,540
    50 CL ...
    , . , .

  4. #4
    Registered User
    Join Date: Sep:2005
    Location:
    Posts: 6,924
    http://www.samsung.com/Products/Semi...K4U52324QE.htm

    "...CL16 @ 1.2GHz CL18 @ 1.4GHz .."

    "...CAS latency :..... 16, 17, 18, 19, 20, 21, 22 (clock)
    Burst length : 8 only..."



    ...CL20 @1.6 CL22@1.8,

    CL22, 4Ghz

  5. #5
    Registered User avius's Avatar
    Join Date: Dec:2005
    Location:
    Posts: 787

    Samsung - GDDR4

    PlayStation 2 + 42" Plasma screen

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